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Samsung Unveils 400-Layer V10 V-NAND for AI Data Center SSDs

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Sig1.85Sen+4.25Env+1.35Soc+0.30Gov+0.10

Samsung Electronics introduced its 10th-generation V10 BV-NAND, featuring an ultra-high stacked structure of over 400 layers for next-generation AI data center storage. The company says it boosts bit density by more than 58% and improves data processing performance by over 33% versus V9, while targeting higher integration, performance, and lower power efficiency for SSDs expected to reach 128TB and 4.8Gbps+ I/O.

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