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Samsung Electronics Unveils V10 Bonding BV-NAND Prototype for Higher-Density Storage

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Samsung Electronics introduced its V10 Bonding V-NAND (BV-NAND) prototype at the Future of Memory and Storage conference in Santa Clara, featuring more than 400 layers and a new wafer-bonding architecture. The company says it raises density about 58% versus V9 and improves read, write and I/O performance, targeting higher-capacity, more power-efficient storage for expanding AI workloads. Long-term customer agreements may reach 60% to 70% of memory sales.

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