ASML and TSMC plan shift to 12-inch High NA EUV photomasks
ASML and TSMC will lead the semiconductor industry’s transition to larger-format 12-inch Extreme Ultraviolet (EUV) lithography photomasks for High NA EUV. The shift, starting with current 6-inch masks, is expected to boost fab productivity, lower chipmaking costs, remove stitching constraints, and support demand for smaller, faster, more energy-efficient chips, enabling advanced nodes from about 2030 onward.